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DDRRambus recently announced the introduction of its memory controller interface solution for industry-standard DDR3 DRAM. The fully integrated hard macro cell provides the physical layer (PHY) interface between the controller logic and DDR3 or DDR2 DRAM devices for data rates of up to 1600 MHz.
Optimized for low power and reduced silicon area, the Rambus DDR3 memory controller interface cell is designed to accommodate a broad range of applications including PC main memory, consumer electronics, servers, workstations, and network communications. To serve these applications, Rambus has architected and developed a DDR3 memory controller interface macro-cell that engineers can seamlessly integrate into their customer owned tooling (COT) or application-specific integrated circuit (ASIC) chip. The Rambus DDR3 interface solution incorporates Rambus innovations such as:
Other key interface features include:
Rambus DDR cells are supported by comprehensive system design and integration services that include a complete set of design models and integration tools, including GDSII database, timing models, layout verification netlists, gate-level models, place-and-route outline, and placement guidelines. Package design and system board layout services are also available. Download the product brief, for more information about the Rambus DDR3 memory controller interface. |
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